當前位置:首頁 > 產(chǎn)品中心 > 二維材料 > 碲化物晶體 > 碲化砷 As2Te3
簡要描述:晶體尺寸:10毫米電學(xué)性能:半導(dǎo)體,拓撲絕緣體,熱電材料晶體結(jié)構(gòu):單斜晶結(jié)構(gòu)晶胞參數(shù):a = 1.430nm,B = 0.403nm,C = 0.986nm,α=γ= 90°,β= 95.40晶體類型:合成晶體純度:>99.995%表征方法:XRD、拉曼、EDX
相關(guān)文章
Related Articles詳細介紹
晶體尺寸:10毫米
電學(xué)性能:半導(dǎo)體,拓撲絕緣體,熱電材料
晶體結(jié)構(gòu):單斜晶結(jié)構(gòu)
晶胞參數(shù):a = 1.430nm,B = 0.403nm,C = 0.986nm,α=γ= 90°,β= 95.40
晶體類型:合成
晶體純度:>99.995%
表征方法:XRD、拉曼、EDX
Powder X-ray diffraction (XRD) of a single crystal As2Te3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal As2Te3 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal As2Te3. Measurement was performed with a 785 nm Raman system at room temperature.
產(chǎn)品咨詢
掃一掃以下二維碼了解更多信息
銷售微信咨詢
網(wǎng)站二維碼