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MoS2 大尺寸二硫化鉬晶體

Natural MoS2 is an indirect gap semiconductor (1.2 eV) but becomes highly luminescent in the monolayer from at 1.9 eV (quasi-particle / optical band gap).

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天然二硫化鎢晶體

Tungsten disulfide (2H-WS2) crystals are extremely rare in nature and are less than 10 microns in the quartz / MoS? matrix.

更新時(shí)間：2024-06-02

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N型二硫化鉬晶體

Years of growth optimization lead to our flawless n-type MoS2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field.

更新時(shí)間：2024-06-02

產(chǎn)品價(jià)格：6700.85

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ZrS2 二硫化鋯晶體 1

Zirconium disulfide (ZrS?) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

更新時(shí)間：2024-06-02

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P型二硫化鉬晶體

More than a decade of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless MoS2 crystals.

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三硫化鈦晶體

Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsemiconductors USA. TiS3 is a layered material like MoS2 and other layered systems.

更新時(shí)間：2024-06-02

產(chǎn)品價(jià)格：7030.4

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